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Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong. A model of hot carrier gate current for uniaxially strained Si NMOSFETJ. Acta Physica Sinica, 2014, 63(19): 197103. DOI: 10.7498/aps.63.197103
Citation: Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong. A model of hot carrier gate current for uniaxially strained Si NMOSFETJ. Acta Physica Sinica, 2014, 63(19): 197103. DOI: 10.7498/aps.63.197103
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A model of hot carrier gate current for uniaxially strained Si NMOSFET

Acta Phys. Sin., 2014, 63(19): 197103.
DOI: 10.7498/aps.63.197103
CSTR: 32037.14.aps.63.197103
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