Ren Sheng, Ma Zhong-Yuan, Jiang Xiao-Fan, Wang Yue-Fei, Xia Guo-Yin, Chen Kun-Ji, Huang Xin-Fan, Xu Jun, Xu Ling, Li Wei, Feng Duan. Dependence of annealing temperatures on the optimized resistive switching behavior from SiOx (x=1.3) filmsJ. Acta Physica Sinica, 2014, 63(16): 167201. DOI: 10.7498/aps.63.167201
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Citation:
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Ren Sheng, Ma Zhong-Yuan, Jiang Xiao-Fan, Wang Yue-Fei, Xia Guo-Yin, Chen Kun-Ji, Huang Xin-Fan, Xu Jun, Xu Ling, Li Wei, Feng Duan. Dependence of annealing temperatures on the optimized resistive switching behavior from SiOx (x=1.3) filmsJ. Acta Physica Sinica, 2014, 63(16): 167201. DOI: 10.7498/aps.63.167201
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Ren Sheng, Ma Zhong-Yuan, Jiang Xiao-Fan, Wang Yue-Fei, Xia Guo-Yin, Chen Kun-Ji, Huang Xin-Fan, Xu Jun, Xu Ling, Li Wei, Feng Duan. Dependence of annealing temperatures on the optimized resistive switching behavior from SiOx (x=1.3) filmsJ. Acta Physica Sinica, 2014, 63(16): 167201. DOI: 10.7498/aps.63.167201
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Citation:
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Ren Sheng, Ma Zhong-Yuan, Jiang Xiao-Fan, Wang Yue-Fei, Xia Guo-Yin, Chen Kun-Ji, Huang Xin-Fan, Xu Jun, Xu Ling, Li Wei, Feng Duan. Dependence of annealing temperatures on the optimized resistive switching behavior from SiOx (x=1.3) filmsJ. Acta Physica Sinica, 2014, 63(16): 167201. DOI: 10.7498/aps.63.167201
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