Chen Ran, Zhou Li-Wei, Wang Jian-Yun, Chen Chang-Jun, Shao Xing-Long, Jiang Hao, Zhang Kai-Liang, Lü Lian-Rong, Zhao Jin-Shi. Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structureJ. Acta Physica Sinica, 2014, 63(6): 067202. DOI: 10.7498/aps.63.067202
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Citation:
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Chen Ran, Zhou Li-Wei, Wang Jian-Yun, Chen Chang-Jun, Shao Xing-Long, Jiang Hao, Zhang Kai-Liang, Lü Lian-Rong, Zhao Jin-Shi. Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structureJ. Acta Physica Sinica, 2014, 63(6): 067202. DOI: 10.7498/aps.63.067202
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Chen Ran, Zhou Li-Wei, Wang Jian-Yun, Chen Chang-Jun, Shao Xing-Long, Jiang Hao, Zhang Kai-Liang, Lü Lian-Rong, Zhao Jin-Shi. Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structureJ. Acta Physica Sinica, 2014, 63(6): 067202. DOI: 10.7498/aps.63.067202
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Citation:
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Chen Ran, Zhou Li-Wei, Wang Jian-Yun, Chen Chang-Jun, Shao Xing-Long, Jiang Hao, Zhang Kai-Liang, Lü Lian-Rong, Zhao Jin-Shi. Multilevel switching mechanism for resistive random access memory based on Cu/SiOx/Al structureJ. Acta Physica Sinica, 2014, 63(6): 067202. DOI: 10.7498/aps.63.067202
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