Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum well

Yang Shuang-Bo

doi:10.7498/aps.63.057301

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Yang Shuang-Bo. Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum wellJ. Acta Physica Sinica, 2014, 63(5): 057301. DOI: 10.7498/aps.63.057301

Citation:

Yang Shuang-Bo. Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum wellJ. Acta Physica Sinica, 2014, 63(5): 057301. DOI: 10.7498/aps.63.057301

Citation:

Yang Shuang-Bo. Effect of temperature and external magnetic field on the structure of electronic state of the Si-uniformlly-doped GaAs quantum wellJ. Acta Physica Sinica, 2014, 63(5): 057301. DOI: 10.7498/aps.63.057301