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中国物理学会期刊
Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi. Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2014, 63(4): 047202. DOI: 10.7498/aps.63.047202
Citation: Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi. Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2014, 63(4): 047202. DOI: 10.7498/aps.63.047202

Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors

CSTR: 32037.14.aps.63.047202
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