Study on Grove model of the 4H-SiC homoepitaxial growth

Jia Ren-Xu; Liu Si-Cheng; Xu Han-Di; Chen Zheng-Tao; Tang Xiao-Yan; Yang Fei; Niu Ying-Xi

doi:10.7498/aps.63.037102

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Jia Ren-Xu, Liu Si-Cheng, Xu Han-Di, Chen Zheng-Tao, Tang Xiao-Yan, Yang Fei, Niu Ying-Xi. Study on Grove model of the 4H-SiC homoepitaxial growthJ. Acta Physica Sinica, 2014, 63(3): 037102. DOI: 10.7498/aps.63.037102

Citation:

Jia Ren-Xu, Liu Si-Cheng, Xu Han-Di, Chen Zheng-Tao, Tang Xiao-Yan, Yang Fei, Niu Ying-Xi. Study on Grove model of the 4H-SiC homoepitaxial growthJ. Acta Physica Sinica, 2014, 63(3): 037102. DOI: 10.7498/aps.63.037102

Citation:

Jia Ren-Xu, Liu Si-Cheng, Xu Han-Di, Chen Zheng-Tao, Tang Xiao-Yan, Yang Fei, Niu Ying-Xi. Study on Grove model of the 4H-SiC homoepitaxial growthJ. Acta Physica Sinica, 2014, 63(3): 037102. DOI: 10.7498/aps.63.037102