Analytical modeling for drain current of strained Si NMOSFET

Zhou Chun-Yu; Zhang He-Ming; Hu Hui-Yong; Zhuang Yi-Qi; Lü Yi; Wang Bin; Li Yu-Chen

doi:10.7498/aps.62.237103

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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen. Analytical modeling for drain current of strained Si NMOSFETJ. Acta Physica Sinica, 2013, 62(23): 237103. DOI: 10.7498/aps.62.237103

Citation:

Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen. Analytical modeling for drain current of strained Si NMOSFETJ. Acta Physica Sinica, 2013, 62(23): 237103. DOI: 10.7498/aps.62.237103

Citation:

Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen. Analytical modeling for drain current of strained Si NMOSFETJ. Acta Physica Sinica, 2013, 62(23): 237103. DOI: 10.7498/aps.62.237103