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中国物理学会期刊
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Yan Da-Wei, Li Li-Sha, Jiao Jin-Ping, Huang Hong-Juan, Ren Jian, Gu Xiao-Feng. Capacitance characteristics of atomic layer deposited Al2O3/n-GaN MOS structureJ. Acta Physica Sinica, 2013, 62(19): 197203. DOI: 10.7498/aps.62.197203
Citation: Yan Da-Wei, Li Li-Sha, Jiao Jin-Ping, Huang Hong-Juan, Ren Jian, Gu Xiao-Feng. Capacitance characteristics of atomic layer deposited Al2O3/n-GaN MOS structureJ. Acta Physica Sinica, 2013, 62(19): 197203. DOI: 10.7498/aps.62.197203
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Capacitance characteristics of atomic layer deposited Al2O3/n-GaN MOS structure

Acta Phys. Sin., 2013, 62(19): 197203.
DOI: 10.7498/aps.62.197203
CSTR: 32037.14.aps.62.197203
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