Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose ratesJ. Acta Physica Sinica, 2013, 62(19): 196104. DOI: 10.7498/aps.62.196104
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Citation:
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose ratesJ. Acta Physica Sinica, 2013, 62(19): 196104. DOI: 10.7498/aps.62.196104
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose ratesJ. Acta Physica Sinica, 2013, 62(19): 196104. DOI: 10.7498/aps.62.196104
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Citation:
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose ratesJ. Acta Physica Sinica, 2013, 62(19): 196104. DOI: 10.7498/aps.62.196104
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