Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing

Zhuo Qing-Qing; Liu Hong-Xia; Wang Zhi

doi:10.7498/aps.62.176106

Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi. Single event effect of 3D H-gate SOI NMOS devices in total dose ionizingJ. Acta Physica Sinica, 2013, 62(17): 176106. DOI: 10.7498/aps.62.176106

Citation:

Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi. Single event effect of 3D H-gate SOI NMOS devices in total dose ionizingJ. Acta Physica Sinica, 2013, 62(17): 176106. DOI: 10.7498/aps.62.176106

Citation:

Zhuo Qing-Qing, Liu Hong-Xia, Wang Zhi. Single event effect of 3D H-gate SOI NMOS devices in total dose ionizingJ. Acta Physica Sinica, 2013, 62(17): 176106. DOI: 10.7498/aps.62.176106