Dislocation motion during rapid thermal processing of single-crystalline silicon wafers

Xu Ling-Mao; Gao Chao; Dong Peng; Zhao Jian-Jiang; Ma Xiang-Yang; Yang De-Ren

doi:10.7498/aps.62.168101

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Xu Ling-Mao, Gao Chao, Dong Peng, Zhao Jian-Jiang, Ma Xiang-Yang, Yang De-Ren. Dislocation motion during rapid thermal processing of single-crystalline silicon wafersJ. Acta Physica Sinica, 2013, 62(16): 168101. DOI: 10.7498/aps.62.168101

Citation:

Xu Ling-Mao, Gao Chao, Dong Peng, Zhao Jian-Jiang, Ma Xiang-Yang, Yang De-Ren. Dislocation motion during rapid thermal processing of single-crystalline silicon wafersJ. Acta Physica Sinica, 2013, 62(16): 168101. DOI: 10.7498/aps.62.168101

Citation:

Xu Ling-Mao, Gao Chao, Dong Peng, Zhao Jian-Jiang, Ma Xiang-Yang, Yang De-Ren. Dislocation motion during rapid thermal processing of single-crystalline silicon wafersJ. Acta Physica Sinica, 2013, 62(16): 168101. DOI: 10.7498/aps.62.168101