Search

x
中国物理学会期刊
Advanced Search
Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric HaloJ. Acta Physica Sinica, 2013, 62(15): 158502. DOI: 10.7498/aps.62.158502
Citation: Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric HaloJ. Acta Physica Sinica, 2013, 62(15): 158502. DOI: 10.7498/aps.62.158502
shu

Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo

Acta Phys. Sin., 2013, 62(15): 158502.
DOI: 10.7498/aps.62.158502
CSTR: 32037.14.aps.62.158502
PDF
导出引用

  • Abstract

    Authors and contacts

    References

Turn off MathJax
Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return
    Baidu
    map