Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum well

Yang Shuang-Bo

doi:10.7498/aps.62.157301

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Yang Shuang-Bo. Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum wellJ. Acta Physica Sinica, 2013, 62(15): 157301. DOI: 10.7498/aps.62.157301

Citation:

Yang Shuang-Bo. Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum wellJ. Acta Physica Sinica, 2013, 62(15): 157301. DOI: 10.7498/aps.62.157301

Citation:

Yang Shuang-Bo. Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum wellJ. Acta Physica Sinica, 2013, 62(15): 157301. DOI: 10.7498/aps.62.157301