Gate current degradation model of the AlGaAs/InGaAs PHEMT

Wan Ning; Guo Chun-Sheng; Zhang Yan-Feng; Xiong Cong; Ma Wei-Dong; Shi Lei; Li Rui; Feng Shi-Wei

doi:10.7498/aps.62.157203

Search

x

Wan Ning, Guo Chun-Sheng, Zhang Yan-Feng, Xiong Cong, Ma Wei-Dong, Shi Lei, Li Rui, Feng Shi-Wei. Gate current degradation model of the AlGaAs/InGaAs PHEMTJ. Acta Physica Sinica, 2013, 62(15): 157203. DOI: 10.7498/aps.62.157203

Citation:

Wan Ning, Guo Chun-Sheng, Zhang Yan-Feng, Xiong Cong, Ma Wei-Dong, Shi Lei, Li Rui, Feng Shi-Wei. Gate current degradation model of the AlGaAs/InGaAs PHEMTJ. Acta Physica Sinica, 2013, 62(15): 157203. DOI: 10.7498/aps.62.157203

Citation:

Wan Ning, Guo Chun-Sheng, Zhang Yan-Feng, Xiong Cong, Ma Wei-Dong, Shi Lei, Li Rui, Feng Shi-Wei. Gate current degradation model of the AlGaAs/InGaAs PHEMTJ. Acta Physica Sinica, 2013, 62(15): 157203. DOI: 10.7498/aps.62.157203