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中国物理学会期刊
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2013, 62(15): 157202. DOI: 10.7498/aps.62.157202
Citation: Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistorsJ. Acta Physica Sinica, 2013, 62(15): 157202. DOI: 10.7498/aps.62.157202
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Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors

Acta Phys. Sin., 2013, 62(15): 157202.
DOI: 10.7498/aps.62.157202
CSTR: 32037.14.aps.62.157202
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