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中国物理学会期刊
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Huang Yuan, Xu Jing-Ping, Wang Li-Sheng, Zhu Shu-Yan. Effects of different scattering mechanisms on inversion-channel electron mobility in Al2O3/InxGa1-xAs nMOSFETJ. Acta Physica Sinica, 2013, 62(15): 157201. DOI: 10.7498/aps.62.157201
Citation: Huang Yuan, Xu Jing-Ping, Wang Li-Sheng, Zhu Shu-Yan. Effects of different scattering mechanisms on inversion-channel electron mobility in Al2O3/InxGa1-xAs nMOSFETJ. Acta Physica Sinica, 2013, 62(15): 157201. DOI: 10.7498/aps.62.157201
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Effects of different scattering mechanisms on inversion-channel electron mobility in Al2O3/InxGa1-xAs nMOSFET

Acta Phys. Sin., 2013, 62(15): 157201.
DOI: 10.7498/aps.62.157201
CSTR: 32037.14.aps.62.157201
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