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中国物理学会期刊
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Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen. Study on gate capacitance-voltage characteristics of strained-SiGe pMOSFETJ. Acta Physica Sinica, 2013, 62(12): 127102. DOI: 10.7498/aps.62.127102
Citation: Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen. Study on gate capacitance-voltage characteristics of strained-SiGe pMOSFETJ. Acta Physica Sinica, 2013, 62(12): 127102. DOI: 10.7498/aps.62.127102
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Study on gate capacitance-voltage characteristics of strained-SiGe pMOSFET

Acta Phys. Sin., 2013, 62(12): 127102.
DOI: 10.7498/aps.62.127102
CSTR: 32037.14.aps.62.127102
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