The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors

Li Xing-Ji; Lan Mu-Jie; Liu Chao-Ming; Yang Jian-Qun; Sun Zhong-Liang; Xiao Li-Yi; He Shi-Yu

doi:10.7498/aps.62.098503

Search

x

Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu. The influence of bias conditions on ionizing radiation damage of NPN and PNP transistorsJ. Acta Physica Sinica, 2013, 62(9): 098503. DOI: 10.7498/aps.62.098503

Citation:

Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu. The influence of bias conditions on ionizing radiation damage of NPN and PNP transistorsJ. Acta Physica Sinica, 2013, 62(9): 098503. DOI: 10.7498/aps.62.098503

Citation:

Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu. The influence of bias conditions on ionizing radiation damage of NPN and PNP transistorsJ. Acta Physica Sinica, 2013, 62(9): 098503. DOI: 10.7498/aps.62.098503