3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor

Zhang Jin-Xin; Guo Hong-Xia; Guo Qi; Wen Lin; Cui Jiang-Wei; Xi Shan-Bin; Wang Xin; Deng Wei

doi:10.7498/aps.62.048501

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Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei. 3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2013, 62(4): 048501. DOI: 10.7498/aps.62.048501

Citation:

Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei. 3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2013, 62(4): 048501. DOI: 10.7498/aps.62.048501

Citation:

Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei. 3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistorJ. Acta Physica Sinica, 2013, 62(4): 048501. DOI: 10.7498/aps.62.048501