Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor

Song Kun; Chai Chang-Chun; Yang Yin-Tang; Jia Hu-Jun; Chen Bin; Ma Zhen-Yang

doi:10.7498/aps.61.177201

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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistorJ. Acta Physica Sinica, 2012, 61(17): 177201. DOI: 10.7498/aps.61.177201

Citation:

Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistorJ. Acta Physica Sinica, 2012, 61(17): 177201. DOI: 10.7498/aps.61.177201

Citation:

Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistorJ. Acta Physica Sinica, 2012, 61(17): 177201. DOI: 10.7498/aps.61.177201