Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors

Xi Shan-Bin; Lu Wu; Wang Zhi-Kuan; Ren Di-Yuan; Zhou Dong; Wen Lin; Sun Jing

doi:10.7498/aps.61.076101

Search

x

Xi Shan-Bin, Lu Wu, Wang Zhi-Kuan, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing. Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistorsJ. Acta Physica Sinica, 2012, 61(7): 076101. DOI: 10.7498/aps.61.076101

Citation:

Xi Shan-Bin, Lu Wu, Wang Zhi-Kuan, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing. Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistorsJ. Acta Physica Sinica, 2012, 61(7): 076101. DOI: 10.7498/aps.61.076101

Citation:

Xi Shan-Bin, Lu Wu, Wang Zhi-Kuan, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing. Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistorsJ. Acta Physica Sinica, 2012, 61(7): 076101. DOI: 10.7498/aps.61.076101