A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise

Sun Peng; Du Lei; Chen Wen-Hao; He Liang

doi:10.7498/aps.61.067801

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Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noiseJ. Acta Physica Sinica, 2012, 61(6): 067801. DOI: 10.7498/aps.61.067801

Citation:

Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noiseJ. Acta Physica Sinica, 2012, 61(6): 067801. DOI: 10.7498/aps.61.067801

Citation:

Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noiseJ. Acta Physica Sinica, 2012, 61(6): 067801. DOI: 10.7498/aps.61.067801