Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET's

Chen Hai-Feng; Guo Li-Xin

doi:10.7498/aps.61.028501

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Chen Hai-Feng, Guo Li-Xin. Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET'sJ. Acta Physica Sinica, 2012, 61(2): 028501. DOI: 10.7498/aps.61.028501

Citation:

Chen Hai-Feng, Guo Li-Xin. Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET'sJ. Acta Physica Sinica, 2012, 61(2): 028501. DOI: 10.7498/aps.61.028501

Citation:

Chen Hai-Feng, Guo Li-Xin. Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET'sJ. Acta Physica Sinica, 2012, 61(2): 028501. DOI: 10.7498/aps.61.028501