Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong. Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layoutsJ. Acta Physica Sinica, 2012, 61(1): 016106. DOI: 10.7498/aps.61.016106
|
Citation:
|
Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong. Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layoutsJ. Acta Physica Sinica, 2012, 61(1): 016106. DOI: 10.7498/aps.61.016106
|
Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong. Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layoutsJ. Acta Physica Sinica, 2012, 61(1): 016106. DOI: 10.7498/aps.61.016106
|
Citation:
|
Fan Xue, Li Wei, Li Ping, Zhang Bin, Xie Xiao-Dong, Wang Gang, Hu Bin, Zhai Ya-Hong. Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layoutsJ. Acta Physica Sinica, 2012, 61(1): 016106. DOI: 10.7498/aps.61.016106
|
DownLoad: