Study of physically modeling for small-scaled strained Si nMOSFET

Qu Jiang-Tao; Zhang He-Ming; Qin Shan-Shan; Xu Xiao-Bo; Wang Xiao-Yan; Hu Hui-Yong

doi:10.7498/aps.60.098501

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Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, Wang Xiao-Yan, Hu Hui-Yong. Study of physically modeling for small-scaled strained Si nMOSFETJ. Acta Physica Sinica, 2011, 60(9): 098501. DOI: 10.7498/aps.60.098501

Citation:

Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, Wang Xiao-Yan, Hu Hui-Yong. Study of physically modeling for small-scaled strained Si nMOSFETJ. Acta Physica Sinica, 2011, 60(9): 098501. DOI: 10.7498/aps.60.098501

Citation:

Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, Wang Xiao-Yan, Hu Hui-Yong. Study of physically modeling for small-scaled strained Si nMOSFETJ. Acta Physica Sinica, 2011, 60(9): 098501. DOI: 10.7498/aps.60.098501