A new growth method of roughed p-GaN in GaN-based light emitting diodes

Li Shui-Qing; Wang Lai; Han Yan-Jun; Luo Yi; Deng He-Qing; Qiu Jian-Sheng; Zhang Jie

doi:10.7498/aps.60.098107

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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodesJ. Acta Physica Sinica, 2011, 60(9): 098107. DOI: 10.7498/aps.60.098107

Citation:

Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodesJ. Acta Physica Sinica, 2011, 60(9): 098107. DOI: 10.7498/aps.60.098107

Citation:

Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodesJ. Acta Physica Sinica, 2011, 60(9): 098107. DOI: 10.7498/aps.60.098107