Investigation on trap by the gate fringecapacitance in GaN HEMT

Wang Xin-Hua; Pang Lei; Chen Xiao-Juan; Yuan Ting-Ting; Luo Wei-Jun; Zheng Ying-Kui; Wei Ke; Liu Xin-Yu

doi:10.7498/aps.60.097101

Search

x

Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu. Investigation on trap by the gate fringecapacitance in GaN HEMTJ. Acta Physica Sinica, 2011, 60(9): 097101. DOI: 10.7498/aps.60.097101

Citation:

Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu. Investigation on trap by the gate fringecapacitance in GaN HEMTJ. Acta Physica Sinica, 2011, 60(9): 097101. DOI: 10.7498/aps.60.097101

Citation:

Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu. Investigation on trap by the gate fringecapacitance in GaN HEMTJ. Acta Physica Sinica, 2011, 60(9): 097101. DOI: 10.7498/aps.60.097101