Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates

Wang Guang-Xu; Tao Xi-Xia; Xiong Chuan-Bing; Liu Jun-Lin; Feng Fei-Fei; Zhang Meng; Jiang Feng-Yi

doi:10.7498/aps.60.078503

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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substratesJ. Acta Physica Sinica, 2011, 60(7): 078503. DOI: 10.7498/aps.60.078503

Citation:

Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substratesJ. Acta Physica Sinica, 2011, 60(7): 078503. DOI: 10.7498/aps.60.078503

Citation:

Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substratesJ. Acta Physica Sinica, 2011, 60(7): 078503. DOI: 10.7498/aps.60.078503