Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2011, 60(6): 068702. DOI: 10.7498/aps.60.068702
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Citation:
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Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2011, 60(6): 068702. DOI: 10.7498/aps.60.068702
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Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2011, 60(6): 068702. DOI: 10.7498/aps.60.068702
|
Citation:
|
Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan. Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistorJ. Acta Physica Sinica, 2011, 60(6): 068702. DOI: 10.7498/aps.60.068702
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