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中国物理学会期刊
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Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju. Range and annealing behavior of Er ions implanted in SiCJ. Acta Physica Sinica, 2011, 60(6): 066101. DOI: 10.7498/aps.60.066101
Citation: Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju. Range and annealing behavior of Er ions implanted in SiCJ. Acta Physica Sinica, 2011, 60(6): 066101. DOI: 10.7498/aps.60.066101
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Range and annealing behavior of Er ions implanted in SiC

Acta Phys. Sin., 2011, 60(6): 066101.
DOI: 10.7498/aps.60.066101
CSTR: 32037.14.aps.60.066101
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