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中国物理学会期刊
Dai Xian-Ying, Jin Guo-Qiang, Dong Jie-Qiong, Wang Chuan-Bao, Zhao Xian, Chu Ya-Ping, Xi Peng-Cheng, Deng Wen-Hong, Zhang He-Ming, Hao Yue. A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materialsJ. Acta Physica Sinica, 2011, 60(6): 065101. DOI: 10.7498/aps.60.065101
Citation: Dai Xian-Ying, Jin Guo-Qiang, Dong Jie-Qiong, Wang Chuan-Bao, Zhao Xian, Chu Ya-Ping, Xi Peng-Cheng, Deng Wen-Hong, Zhang He-Ming, Hao Yue. A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materialsJ. Acta Physica Sinica, 2011, 60(6): 065101. DOI: 10.7498/aps.60.065101

A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials

CSTR: 32037.14.aps.60.065101
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