Dai Xian-Ying, Jin Guo-Qiang, Dong Jie-Qiong, Wang Chuan-Bao, Zhao Xian, Chu Ya-Ping, Xi Peng-Cheng, Deng Wen-Hong, Zhang He-Ming, Hao Yue. A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materialsJ. Acta Physica Sinica, 2011, 60(6): 065101. DOI: 10.7498/aps.60.065101
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Citation:
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Dai Xian-Ying, Jin Guo-Qiang, Dong Jie-Qiong, Wang Chuan-Bao, Zhao Xian, Chu Ya-Ping, Xi Peng-Cheng, Deng Wen-Hong, Zhang He-Ming, Hao Yue. A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materialsJ. Acta Physica Sinica, 2011, 60(6): 065101. DOI: 10.7498/aps.60.065101
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Dai Xian-Ying, Jin Guo-Qiang, Dong Jie-Qiong, Wang Chuan-Bao, Zhao Xian, Chu Ya-Ping, Xi Peng-Cheng, Deng Wen-Hong, Zhang He-Ming, Hao Yue. A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materialsJ. Acta Physica Sinica, 2011, 60(6): 065101. DOI: 10.7498/aps.60.065101
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Citation:
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Dai Xian-Ying, Jin Guo-Qiang, Dong Jie-Qiong, Wang Chuan-Bao, Zhao Xian, Chu Ya-Ping, Xi Peng-Cheng, Deng Wen-Hong, Zhang He-Ming, Hao Yue. A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materialsJ. Acta Physica Sinica, 2011, 60(6): 065101. DOI: 10.7498/aps.60.065101
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