Search

x
中国物理学会期刊
Advanced Search
Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong. Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gateJ. Acta Physica Sinica, 2011, 60(5): 058502. DOI: 10.7498/aps.60.058502
Citation: Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong. Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gateJ. Acta Physica Sinica, 2011, 60(5): 058502. DOI: 10.7498/aps.60.058502
shu

Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate

Acta Phys. Sin., 2011, 60(5): 058502.
DOI: 10.7498/aps.60.058502
CSTR: 32037.14.aps.60.058502
PDF
Get Citation

  • Abstract

    Authors and contacts

    References

Turn off MathJax
Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return
    Baidu
    map