Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu. A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFETJ. Acta Physica Sinica, 2011, 60(5): 058501. DOI: 10.7498/aps.60.058501
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Citation:
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Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu. A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFETJ. Acta Physica Sinica, 2011, 60(5): 058501. DOI: 10.7498/aps.60.058501
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Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu. A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFETJ. Acta Physica Sinica, 2011, 60(5): 058501. DOI: 10.7498/aps.60.058501
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Citation:
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Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu. A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFETJ. Acta Physica Sinica, 2011, 60(5): 058501. DOI: 10.7498/aps.60.058501
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