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中国物理学会期刊
Zhang En-Xia, Tang Hai-Ma, Zheng Zhong-Shan, Yu Fang, Li Ning, Wang Ning-Juan, Li Guo-Hua, Ma Hong-Zhi. Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafersJ. Acta Physica Sinica, 2011, 60(5): 056104. DOI: 10.7498/aps.60.056104
Citation: Zhang En-Xia, Tang Hai-Ma, Zheng Zhong-Shan, Yu Fang, Li Ning, Wang Ning-Juan, Li Guo-Hua, Ma Hong-Zhi. Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafersJ. Acta Physica Sinica, 2011, 60(5): 056104. DOI: 10.7498/aps.60.056104

Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers

CSTR: 32037.14.aps.60.056104
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