Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED

Zhang Yun-Yan; Fan Guan-Han

doi:10.7498/aps.60.018502

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Zhang Yun-Yan, Fan Guan-Han. Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LEDJ. Acta Physica Sinica, 2011, 60(1): 018502. DOI: 10.7498/aps.60.018502

Citation:

Zhang Yun-Yan, Fan Guan-Han. Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LEDJ. Acta Physica Sinica, 2011, 60(1): 018502. DOI: 10.7498/aps.60.018502

Citation:

Zhang Yun-Yan, Fan Guan-Han. Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LEDJ. Acta Physica Sinica, 2011, 60(1): 018502. DOI: 10.7498/aps.60.018502