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中国物理学会期刊
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Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng. Study on power characteristics of deep sub-micron SOI RF LDMOSJ. Acta Physica Sinica, 2011, 60(1): 018501. DOI: 10.7498/aps.60.018501
Citation: Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng. Study on power characteristics of deep sub-micron SOI RF LDMOSJ. Acta Physica Sinica, 2011, 60(1): 018501. DOI: 10.7498/aps.60.018501
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Study on power characteristics of deep sub-micron SOI RF LDMOS

Acta Phys. Sin., 2011, 60(1): 018501.
DOI: 10.7498/aps.60.018501
CSTR: 32037.14.aps.60.018501
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