Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao. Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layerJ. Acta Physica Sinica, 2011, 60(1): 017303. DOI: 10.7498/aps.60.017303
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Citation:
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao. Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layerJ. Acta Physica Sinica, 2011, 60(1): 017303. DOI: 10.7498/aps.60.017303
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao. Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layerJ. Acta Physica Sinica, 2011, 60(1): 017303. DOI: 10.7498/aps.60.017303
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Citation:
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao. Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layerJ. Acta Physica Sinica, 2011, 60(1): 017303. DOI: 10.7498/aps.60.017303
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