Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer

Cheng Ping; Zhang Yu-Ming; Zhang Yi-Men

doi:10.7498/aps.60.017103

Search

x

Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayerJ. Acta Physica Sinica, 2011, 60(1): 017103. DOI: 10.7498/aps.60.017103

Citation:

Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayerJ. Acta Physica Sinica, 2011, 60(1): 017103. DOI: 10.7498/aps.60.017103

Citation:

Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayerJ. Acta Physica Sinica, 2011, 60(1): 017103. DOI: 10.7498/aps.60.017103