Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED

Wang Bing; Li Zhi-Cong; Yao Ran; Liang Meng; Yan Fa-Wang; Wang Guo-Hong

doi:10.7498/aps.60.016108

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Wang Bing, Li Zhi-Cong, Yao Ran, Liang Meng, Yan Fa-Wang, Wang Guo-Hong. Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LEDJ. Acta Physica Sinica, 2011, 60(1): 016108. DOI: 10.7498/aps.60.016108

Citation:

Wang Bing, Li Zhi-Cong, Yao Ran, Liang Meng, Yan Fa-Wang, Wang Guo-Hong. Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LEDJ. Acta Physica Sinica, 2011, 60(1): 016108. DOI: 10.7498/aps.60.016108

Citation:

Wang Bing, Li Zhi-Cong, Yao Ran, Liang Meng, Yan Fa-Wang, Wang Guo-Hong. Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LEDJ. Acta Physica Sinica, 2011, 60(1): 016108. DOI: 10.7498/aps.60.016108