Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector

Deng Yi; Zhao De-Gang; Wu Liang-Liang; Liu Zong-Shun; Zhu Jian-Jun; Jiang De-Sheng; Zhang Shu-Ming; Liang Jun-Wu

doi:10.7498/aps.59.8903

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Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu. Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetectorJ. Acta Physica Sinica, 2010, 59(12): 8903-8909. DOI: 10.7498/aps.59.8903

Citation:

Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu. Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetectorJ. Acta Physica Sinica, 2010, 59(12): 8903-8909. DOI: 10.7498/aps.59.8903

Citation:

Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu. Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetectorJ. Acta Physica Sinica, 2010, 59(12): 8903-8909. DOI: 10.7498/aps.59.8903