Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor

Liu Hong-Xia; Yin Xiang-Kun; Liu Bing-Jie; Hao Yue

doi:10.7498/aps.59.8877

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Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue. Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistorJ. Acta Physica Sinica, 2010, 59(12): 8877-8882. DOI: 10.7498/aps.59.8877

Citation:

Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue. Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistorJ. Acta Physica Sinica, 2010, 59(12): 8877-8882. DOI: 10.7498/aps.59.8877

Citation:

Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue. Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistorJ. Acta Physica Sinica, 2010, 59(12): 8877-8882. DOI: 10.7498/aps.59.8877