The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulse

Chai Chang-Chun; Xi Xiao-Wen; Ren Xing-Rong; Yang Yin-Tang; Ma Zhen-Yang

doi:10.7498/aps.59.8118

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Chai Chang-Chun, Xi Xiao-Wen, Ren Xing-Rong, Yang Yin-Tang, Ma Zhen-Yang. The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulseJ. Acta Physica Sinica, 2010, 59(11): 8118-8124. DOI: 10.7498/aps.59.8118

Citation:

Chai Chang-Chun, Xi Xiao-Wen, Ren Xing-Rong, Yang Yin-Tang, Ma Zhen-Yang. The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulseJ. Acta Physica Sinica, 2010, 59(11): 8118-8124. DOI: 10.7498/aps.59.8118

Citation:

Chai Chang-Chun, Xi Xiao-Wen, Ren Xing-Rong, Yang Yin-Tang, Ma Zhen-Yang. The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulseJ. Acta Physica Sinica, 2010, 59(11): 8118-8124. DOI: 10.7498/aps.59.8118