Effect of distances from source or drain to the gate on the robustness of sub-micron ggNMOS ESD protection circuit

Zhang Bing; Chai Chang-Chun; Yang Yin-Tang

doi:10.7498/aps.59.8063

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Zhang Bing, Chai Chang-Chun, Yang Yin-Tang. Effect of distances from source or drain to the gate on the robustness of sub-micron ggNMOS ESD protection circuitJ. Acta Physica Sinica, 2010, 59(11): 8063-8070. DOI: 10.7498/aps.59.8063

Citation:

Zhang Bing, Chai Chang-Chun, Yang Yin-Tang. Effect of distances from source or drain to the gate on the robustness of sub-micron ggNMOS ESD protection circuitJ. Acta Physica Sinica, 2010, 59(11): 8063-8070. DOI: 10.7498/aps.59.8063

Citation:

Zhang Bing, Chai Chang-Chun, Yang Yin-Tang. Effect of distances from source or drain to the gate on the robustness of sub-micron ggNMOS ESD protection circuitJ. Acta Physica Sinica, 2010, 59(11): 8063-8070. DOI: 10.7498/aps.59.8063