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中国物理学会期刊
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Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei. High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistorsJ. Acta Physica Sinica, 2010, 59(10): 7333-7337. DOI: 10.7498/aps.59.7333
Citation: Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei. High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistorsJ. Acta Physica Sinica, 2010, 59(10): 7333-7337. DOI: 10.7498/aps.59.7333
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High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors

Acta Phys. Sin., 2010, 59(10): 7333-7337.
DOI: 10.7498/aps.59.7333
CSTR: 32037.14.aps.59.7333
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