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中国物理学会期刊
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Yang Hong-Dong, Yu Qi, Wang Xiang-Zhan, Li Jing-Chun, Ning Ning, Yang Mo-Hua. Strain relaxation mechanism of pseudomorphic SiGe using low-temperature technologyJ. Acta Physica Sinica, 2010, 59(8): 5743-5748. DOI: 10.7498/aps.59.5743
Citation: Yang Hong-Dong, Yu Qi, Wang Xiang-Zhan, Li Jing-Chun, Ning Ning, Yang Mo-Hua. Strain relaxation mechanism of pseudomorphic SiGe using low-temperature technologyJ. Acta Physica Sinica, 2010, 59(8): 5743-5748. DOI: 10.7498/aps.59.5743
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Strain relaxation mechanism of pseudomorphic SiGe using low-temperature technology

Acta Phys. Sin., 2010, 59(8): 5743-5748.
DOI: 10.7498/aps.59.5743
CSTR: 32037.14.aps.59.5743
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