N-polar n-type ohmic contact of GaN-based LED on Si substrate

Wang Guang-Xu; Jiang Feng-Yi; Feng Fei-Fei; Liu Jun-Lin; Qiu Chong

doi:10.7498/aps.59.5706

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Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong. N-polar n-type ohmic contact of GaN-based LED on Si substrateJ. Acta Physica Sinica, 2010, 59(8): 5706-5709. DOI: 10.7498/aps.59.5706

Citation:

Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong. N-polar n-type ohmic contact of GaN-based LED on Si substrateJ. Acta Physica Sinica, 2010, 59(8): 5706-5709. DOI: 10.7498/aps.59.5706

Citation:

Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong. N-polar n-type ohmic contact of GaN-based LED on Si substrateJ. Acta Physica Sinica, 2010, 59(8): 5706-5709. DOI: 10.7498/aps.59.5706