Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue. The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor depositionJ. Acta Physica Sinica, 2009, 58(8): 5705-5708. DOI: 10.7498/aps.58.5705
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Citation:
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Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue. The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor depositionJ. Acta Physica Sinica, 2009, 58(8): 5705-5708. DOI: 10.7498/aps.58.5705
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Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue. The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor depositionJ. Acta Physica Sinica, 2009, 58(8): 5705-5708. DOI: 10.7498/aps.58.5705
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Citation:
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Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue. The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor depositionJ. Acta Physica Sinica, 2009, 58(8): 5705-5708. DOI: 10.7498/aps.58.5705
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