Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures

Jiang Yang; Luo Yi; Wang Lai; Li Hong-Tao; Xi Guang-Yi; Zhao Wei; Han Yan-Jun

doi:10.7498/aps.58.3468

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Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun. Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structuresJ. Acta Physica Sinica, 2009, 58(5): 3468-3473. DOI: 10.7498/aps.58.3468

Citation:

Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun. Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structuresJ. Acta Physica Sinica, 2009, 58(5): 3468-3473. DOI: 10.7498/aps.58.3468

Citation:

Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun. Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structuresJ. Acta Physica Sinica, 2009, 58(5): 3468-3473. DOI: 10.7498/aps.58.3468