Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts

Huang Wei; Chen Zhi-Zhan; Chen Bo-Yuan; Zhang Jing-Yu; Yan Cheng-Feng; Xiao Bing; Shi Er-Wei

doi:10.7498/aps.58.3443

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Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contactsJ. Acta Physica Sinica, 2009, 58(5): 3443-3447. DOI: 10.7498/aps.58.3443

Citation:

Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contactsJ. Acta Physica Sinica, 2009, 58(5): 3443-3447. DOI: 10.7498/aps.58.3443

Citation:

Huang Wei, Chen Zhi-Zhan, Chen Bo-Yuan, Zhang Jing-Yu, Yan Cheng-Feng, Xiao Bing, Shi Er-Wei. Effect of hydrofluoric acid etching time on Ni/6H-SiC contactsJ. Acta Physica Sinica, 2009, 58(5): 3443-3447. DOI: 10.7498/aps.58.3443