Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO diluted magnetic semiconductor

Chen Jing; Jin Guo-Jun; Ma Yu-Qiang

doi:10.7498/aps.58.2707

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Chen Jing, Jin Guo-Jun, Ma Yu-Qiang. Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO diluted magnetic semiconductorJ. Acta Physica Sinica, 2009, 58(4): 2707-2712. DOI: 10.7498/aps.58.2707

Citation:

Chen Jing, Jin Guo-Jun, Ma Yu-Qiang. Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO diluted magnetic semiconductorJ. Acta Physica Sinica, 2009, 58(4): 2707-2712. DOI: 10.7498/aps.58.2707

Citation:

Chen Jing, Jin Guo-Jun, Ma Yu-Qiang. Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO diluted magnetic semiconductorJ. Acta Physica Sinica, 2009, 58(4): 2707-2712. DOI: 10.7498/aps.58.2707